多孔SiCO陶瓷中SiC纳米线的原位合成及生长机理  

In situ Synthesis and Growth Mechanism of SiC Nanowires in SiCO Porous Ceramics

作　　者：潘建梅[1] 程晓农[1] 严学华[1] 张成华[1] 徐桂芳[1] 

机构地区：[1]江苏大学材料科学与工程学院,镇江212013

出　　处：《无机材料学报》2013年第5期474-478,共5页Journal of Inorganic Materials

基　　金：江苏省材料摩擦学重点实验室开放基金(kjsmcx07005);江苏省高校自然科学基金(08KJD430010);江苏省普通高校研究生科研创新计划(CXZZ11_0558);江苏大学高级专业人才科研启动基金(09jdg033);常熟市科技发展规划项目(CG201005)~~

摘　　要：采用聚氨酯海绵为多孔模板,浸渍有机硅树脂后在Ar气氛中原位合成了SiC纳米线。采用TG、XRD、SEM和TEM等分析测试手段对样品进行了表征,研究了保温时间对合成SiC纳米线的影响,并探讨了SiC纳米线的生长机理。研究结果表明:SiC纳米线生长在多孔陶瓷中,纳米线长度达几十微米,单根纳米线的直径不均一。SiC纳米线的生长机理为VS生长模式。随着保温时间的延长,纳米线的数量增加,形貌发生了变化,且多孔陶瓷的比表面积明显增大,体积电阻率降低。SiC nanowires were in situ prepared in Ar atmosphere using polyurethane sponge as a porous template infiltrated with silicone resin. Characterizations of the samples were carried out by TG, XRD, SEM and TEM. The effects of the holding time on the synthesis of SiC nanowires were observed. The growth mechanism of SiC nanowires was discussed. The experimental results show that SiC nanowires were grown directly within the pores of the porous ceramics. The lengths of these nanowires are up to several tens of micrometers and single nanowire has a districtive diameter. The growth mechanism of the nanowires is supported by VS growth model. With the in- crease of the holding time, the amount of the nanowires increases and these nanowires present different morphologies. Furthermore, the specific surface area of the porous ceramics increases significantly and the volume resistivity decreases.

关 键 词：SIC纳米线 聚合物先驱体 多孔陶瓷 原位合成 

分 类 号：TQ174[化学工程—陶瓷工业]