三代像增强器透射式GaAs阴极光电发射稳定性研究  

Stability of transmission GaAs cathode photoemission of 3rd generation image intensifier

作　　者：徐江涛[1] 程耀进[1] 刘峰[1] 李敏[1] 刘蓓蓓[1] 

机构地区：[1]北方夜视科技集团有限公司微光夜视技术重点实验室,陕西西安710119

出　　处：《应用光学》2013年第3期489-493,共5页Journal of Applied Optics

摘　　要：为了解决三代像增强器管内阴极灵敏度下降问题,用质谱计对激活工艺过程进行质量检测,并确定了激活工艺参数,通过对阴极原子级洁净表面获得和激活铯、氧提纯工艺参数优化研究,对制备的透射式GaAs阴极光电发射稳定性进行在线试验,结果表明:在10-9 Pa真空环境中,优化工艺激活的光电阴灵敏度(1 500μA/lm)稳定,而且500h不下降,铟封到管内的阴极灵敏度下降与真空度降低和有害气体污染有关。In order to find the reason of sensitivity degradation in tube body of the third genera- tion low-light-level （LLL） image intensifier, on-line quality detection was carried out by using mass spectrometer and activation process parameters were determined. The acquisition of the cathode atom clean surface, high pure cesium and oxygen source were studied. The online sta- bility for transmission cathode photoemission of GaAs was measured. Results show that the sensitivity （1 500μA/lm） is stable in ultra-high vacuum pressure 10-9 Pa in continuous time of 500 hour. Sensitivity degradation is in connection with the vacuum loss and harmful gas pollu- tion.

关 键 词：三代像增强器 透射式 光电发射 稳定性 管内灵敏度 

分 类 号：TN144[电子电信—物理电子学]