Growth and low-energy electron microscopy characteri- zation of monolayer hexagonal boron nitride on epitaxial cobalt  

作　　者：Carlo M. Orofeo Satoru Suzuki Hiroyuki Kageshima Hiroki Hibino 

机构地区：[1]NTT Basic Research Laboratories, NTT Corporation, A tsugi, Kanagawa 243-0198 Japan

出　　处：《Nano Research》2013年第5期335-347,共13页纳米研究（英文版）

摘　　要：Low-energy electron microscopy （LEEM） has been used to study the structure, initial growth orientation, growth progression, and the number of layers of atomically thin hexagonal boron nitride （h-BN） films. The h-BN films are grown on heteroepitaxial Co using chemical vapor deposition （CVD） at low pressure. Our findings from LEEM studies include the growth of monolayer film having two, oppositely oriented, triangular BN domains commensurate with the Co lattice. The growth of h-BN appears to be self-limiting at a monolayer, with thicker domains only appearing in patches, presumably initiated between domain boundaries. Reflectivity measurements of the thicker h-BN films show oscillations resulting from the resonant electron transmission through quantized electronic states of the h-BN films, with the number of minima scaling up with the number of h-BN layers. First principles density functional theory （DFT） calculations show that the positions of oscillations are related to the electronic band structure of h-BN.低精力的电子显微镜学(LEEM ) 习惯于原子地薄的六角形的硼氮化物(h-BN ) 的层的结构，起始的生长取向，生长前进，和数字拍摄的学习。h-BN 电影在低压力用化学蒸汽免职(CVD ) 在 heteroepitaxial 公司上被种。我们从 LEEM 的调查结果学习包括有二的单层电影的生长，与公司格子同量的相对地面向的、三角形的 BN 领域。h-BN 的生长看起来在单层自我限制，与仅仅出现在补丁的更厚的领域，大概在领域边界之间开始了。更厚的 h-BN 电影的反射率大小显示出通过 h-BN 电影的使量子化的电子状态源于反响的电子传播的摆动，与与 h-BN 层的数字扩大规模的最小的数字。第一原则密度功能的理论(DFT ) 计算证明摆动的位置与 h-BN 的电子乐队结构有关。

关 键 词：chemical vapor deposition COBALT domain boundaries hexagonal boron nitride low-energy electronmicroscopy （LEEM） 

分 类 号：O613.81[理学—无机化学] TG146.11[理学—化学]