Epitaxial Lead Selenide Layers over a Wide Range of Their Thickness on Dielectric Substrates  

作　　者：Arif M. Pashaev Omar I. Davarashvili Megi I. Enukashvili Zaira G. Akhvlediani Revaz G. Gulyaev Larisa P. Bychkova 

机构地区：[1]National Aviation Academy of Azerbaijan, Baku, Azerbao'an [2]lv. Javakhishvili Tbilisi State University, Tbilisi, Georgia [3]E. Andronikashvili Institute of Physics, Tbilisi, Georgia

出　　处：《材料科学与工程（中英文B版）》2013年第2期97-103,共7页Journal of Materials Science and Engineering B

关 键 词：硒化铅 介质基片 厚度 相对变形 晶格常数 生长介质 氯化钠 氟化钡 

分 类 号：TN215[电子电信—物理电子学] TN817.03