p-on-n HgCdTe红外探测器机理分析与性能计算  

Fundamentals of p-on-n HgCdTe Infrared Detectors and Their Detectivity Calculations

作　　者：曾戈虹[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2013年第5期249-258,共10页Infrared Technology

摘　　要：根据HgCdTe材料特性和p-on-n HgCdTe红外探测器结构,建立了p-on-n HgCdTe红外探测器三维数理模型。通过对三维理论模型的求解,得到探测器内部载流子的输运特性,实现了对不同波段、不同工作温度p-on-n HgCdTe红外探测器探测率的理论计算。计算结果表明:p-on-n HgCdTe红外探测器优异的高灵敏度和高温特性,能在红外短波、中波和长波3个波段上全面满足未来红外系统对高性能红外探测器的需求。Based on the properties of HgCdTe materials and the physics of the p-on-n HgCdTe detector, a 3- D theoretical detector modeling and calculation were carried out. The p-on-n HgCdTe detector performances in short, middle and long wavelengths were calculated in terms of detectivity versus device working temperatures with cut-off response at 3, 5, and 10.5 μm, respectively. The results show that the performance of p-on-n HgCdTe detectors can meet the requirements of future high-end infrared system for high sensitivity and high working temperature detectors in all short, middle and long wavelengths.

关 键 词：p-on-n HgCdTe 器件模型 理论计算 红外探测器 高性能红外系统 

分 类 号：TN215[电子电信—物理电子学]