Bi和Nd共掺CsI晶体近红外宽带发光性能  

Near-infrared Broadband Luminescence Properties of Bi and Nd Co-doped CsI Crystals

作　　者：范晓[1] 苏良碧[1] 徐军[1] 蒋先涛[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,透明光功能无机材料重点实验室,上海201899

出　　处：《硅酸盐学报》2013年第6期797-802,共6页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(61078053,51002175,60938001)资助项目

摘　　要：采用坩埚下降法生长了Bi和Nd共掺的CsI晶体。X射线衍射分析表明,Bi和Nd共掺并不影响晶体结构,其空间群为Pm3m。通过测试晶体的实际掺杂浓度发现,共掺导致了Bi掺杂浓度的降低。对晶体进行退火处理,并测试了晶体的吸收光谱和发射光谱。结果表明:Bi和Nd共掺能够提高晶体中带电子色心V′Cs的浓度,经高温退火后能获得较多的低价态的Bi离子发光团簇,从而提高了晶体的近红外宽带发光性能。晶体的Raman光谱显示,掺Bi的CsI晶体近红外宽带发光中心的2个特征Raman峰分别位于164和176cm–1处。此外,还提出CsI晶体中发光中心Bi+和低价态团簇Bi2+的形成离不开高价态Bi离子的靠拢团聚作用。Bi and Nd co-doped CsI （Bi,Nd：CsI） crystals were grown by a vertical Bridgman method. The result by X-ray diffraction shows that the as-grown Bi,Nd：CsI crystal exhibits a single-phase （Pm3m） CsI, and the doping of Bi and Nd ions into the Bi,Nd：CsI crystal lattice does not affect its basic crystal structure. It was found that the co-doping could lead to the decrease of Bi doping con- centration. The co-doped crystal was annealed, and the absorption and emission spectra of the crystal were determined. The results show that Bi and Nd co-doping can increase the concentration of V＇cs. A high temperature annealing can obtain a lower valence state of the Bi ions luminous clusters, which improves the near-infrared broadband luminescence properties of the crystal. The Bi,Nd：CsI crystal has two Raman characteristic peaks of near-infrared broadband luminescence centers, which are located at 164 and 176 cm-1, respectively. In addition, the formation ofBi＋ and Bi2＋ bound up with the aggregation of high-valence Bi ions was also discussed.

关 键 词：碘化铯晶体 近红外发光 铋 钕 共掺 

分 类 号：O434.3[机械工程—光学工程] O734[理学—光学]