向日葵种胚的V离子注入研究  

A study on V ion implantation in embryos of sunflower

作　　者：李永良[1] 周云龙[1] 苏颖[2] 林文廉[2] 

机构地区：[1]北京师范大学,北京100875 [2]北京师范大学低能核物理研究所,北京100875

出　　处：《核技术》2000年第4期219-222,共4页Nuclear Techniques

基　　金：国家自然科学基金!19890300

摘　　要：利用扫描电子显微镜和能量色散谱仪研究Ｖ离子注入向日葵种胚后注入元素的深度分布，用透射电子显微镜（ＴＥＭ）研究离子注入前后子叶及胚轴部位细胞的显微结构变化。结果发现Ｖ离子在种皮层的注入深度达到１８μ ｍ，而在胚部位（如子叶、胚轴和胚根等）则没有测到Ｖ元素；注入前后子叶和胚轴细胞的显微结构在ＴＥＭ上没有明显的变化。The depth distribution of vanadium in the embroys sunflower after V ion implantation were studied by SEM and TEM. The longitudinal depth of vanadium was 18 μm in seed coat while it was not found in embryo. And the TEM results indicated that the microstructure of embryo cells after implantation was not obviously changed.

关 键 词：诱变育种 钒离子注入 细胞显微结构 向日葵 种胚 

分 类 号：S565.503.5[农业科学—作物学]