单电子器件的Monte Carlo模拟  

Monte Carlo Simulation of Single Electron Device

作　　者：何红波[1] 周继承[1] 胡慧芳 李义兵[1] 

机构地区：[1]长沙铁道学院材料研究所,长沙410075

出　　处：《微电子学与计算机》2000年第4期47-50,共4页Microelectronics & Computer

基　　金：国家自然科学基金; 霍英东基金!(69771011;69890227)

摘　　要：文章介绍了一种利用正统理论与 Ｍｏｎｔｅ Ｃａｒｌｏ方法模拟单电子隧穿器件的程序。该程序可模拟电子通过包含小隧道结、电容和理想电压源的电路的输运过程。利用该程序，对单库仑岛和多库仑岛的单电子晶体管（ＳＥＴ）系统进行了模拟。In the paper, a simulator which is suitable for single electron tunneling device, based on Orthodox theory and Monte Carlo method, is introduced. It simulates the propagation of electrons through a network consisting of small tunnel junctions, capacitors and ideal voltage sources. The simulation of the SET(single electron transistor) which is comprised of single Columb island and multi-islands are done using the simulator.

关 键 词：MONTE CARLO模拟 单电子器件 单电子晶体管 

分 类 号：TN321[电子电信—物理电子学]