硅衬底上YBa_2Cu_3O_(7-δ)超导薄膜的制备  

PREPARATION OF YBa_2 Cu_3O_(7-δ) THIN FILMS ON SILICON

作　　者：张若剑 杨森祖[1] 张世远[2] 张鸿才[2] 

机构地区：[1]南京大学信息物理系 [2]南京大学物理系

出　　处：《低温与超导》1991年第2期22-26,共5页Cryogenics and Superconductivity

基　　金：国家自然科学基金;国家超导研究开发中心资助

摘　　要：叙述了采用DC磁控溅射方法直接在Si衬底上制备YBa_2Cu_3O_(7-δ)(YBCO)超导薄膜的过程;讨论了衬底温度、薄膜厚度和后处理工艺等因素的影响;研究了Si与YBCO膜之间互相扩散的情况。溅射时衬底温度630℃,后在480～500℃进行原位等离子体氧化,再缓慢降温至200℃。在Si(100)和Si(111)上得到的YBCO膜,其零电阻温度分别为63K和64K。Factors such, as substrate temperature, film thickness, post annealing conditions in the preparation of superconducting YBa2Cu3O7-δ (YBCO) thin film on silicon directly using DC magnetron sputtering were described.Interdiffusion between YBCO film and silicon substrate was researched.The films were deposited at 630℃ and plasma oxdized at 480-500℃, then cooled down slowly to 200℃.The films on single crystal Si(100) and Si(111) exhibit zero resistance at 63 K and 64 K respectively.

关 键 词：超导薄膜 制备 硅 衬底 化合物 

分 类 号：TM262.05[一般工业技术—材料科学与工程]