大功率晶体管材料参数计算与分析  

Parameter Calculation and Analysis of High-power Transistor Materials

作　　者：杨方[1] 

机构地区：[1]遵义师范学院物理与机电工程学院,遵义563002

出　　处：《科学技术与工程》2013年第16期4686-4690,共5页Science Technology and Engineering

基　　金：贵州省重点支持学科(黔教高发〔2011〕275号)资助

摘　　要：为更好地研究大功率晶体管的工作原理,针对集电极最大允许耗散功率P=50 W的具体大功率晶体管参数要求,利用近似方法结合制造工艺条件进行综合分析,计算出大功率晶体管的晶片电阻率、基区和发射区表面浓度、外延层杂质浓度和电阻率等材料参数;并分析了材料质量对大功率晶体管成品率的影响和大功率晶体管的击穿原因,为大功率晶体管的结构设计和应用提供了数据支撑。分析方法通过实验验证,具有较好的实用性。For better power transistor works, the maximum allowable dissipation power P = 50 W high-power transistor parameter requirements for collector, approximation method combined with the manufacturing process con- ditions to conduct a comprehensive analysis. The high-power transistor chip resistivity is calculated, base and emit- ter surface concentration, material parameters of the epitaxial layer impurity concentration and resistivity. And the reasons of the breakdown of the quality of the materials on the yield of high-power transistors and high-power tran- sistors are analyzed. The structural design and application of high-power transistors are provided data support. Analysis method is verified by experiment with good practice.

关 键 词：大功率晶体管 材料参数 半导体技术 设计 分析 

分 类 号：TN32[电子电信—物理电子学]