Effect of Er ion implantation on the physical and electrical properties of TiN/HfO_2 gate stacks on Si substrate  

作　　者：ZHAO Mei LIANG RenRong WANG Jing XU Jun 

机构地区：[1]Tsinghua National Laboratory for Information Science and Technology,Institute of Microelectronics,Tsinghua University

出　　处：《Science China(Physics,Mechanics & Astronomy)》2013年第7期1384-1388,共5页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the State Key Development Program for Basic Research of China(Grant No. 2011CBA00602);the National Natural Science Foundation of China(Grant Nos. 60876076 and 60976013)

摘　　要：In this paper, we report the fabrication, electrical and physical characteristics of TiN/HfO2/Si MOS capacitors with erbium （Er） ion implantation. It is demonstrated that the fiat band voltage can be reduced by 0.4 V due to the formation of Er oxide. Moreover, it is observed that the equivalent oxide thickness is thinned down by 0.5 nm because the thickness of interfacial layer is significantly reduced, which is thought to be attributed to the strong binding capability of the implanted Er atoms with oxygen atoms. In addition, cross-sectional transmission electron microscopy experiment shows that the HfO2 layer with Er ion implantation is still amorphous after annealing at a high temperature. This Er ion implantation technique has the potential to be implemented as a band edge metal gate solution for NMOS without a capping layer, and may also satisfy the demand of the EOT reduction in 32 nm technology node.In this paper, we report the fabrication, electrical and physical characteristics of TiN/HfO2/Si MOS capacitors with erbium (Er) ion implantation. It is demonstrated that the flat band voltage can be reduced by 0.4 V due to the formation of Er oxide. Moreover, it is observed that the equivalent oxide thickness is thinned down by 0.5 nm because the thickness of interfacial layer is significantly reduced, which is thought to be attributed to the strong binding capability of the implanted Er atoms with oxygen atoms. In addition, cross-sectional transmission electron microscopy experiment shows that the HfO2 layer with Er ion implantation is still amorphous after annealing at a high temperature. This Er ion implantation technique has the potential to be implemented as a band edge metal gate solution for NMOS without a capping layer, and may also satisfy the demand of the EOT reduction in 32 nm technology node.

关 键 词：erbium ion implantation high-k/metal-gate equivalent oxide thickness fiat band voltage interfacial layer CRYSTALLIZATION 

分 类 号：TN305.3[电子电信—物理电子学]