Ta:SnO_2薄膜的制备与性能研究  

Preparation and Properties of Ta Doped SnO_2 Film

作　　者：秦国强[1] 封雅宏[2] 张光磊[1] 杨亮亮[1] 张娟娟[1] 马岳峰[1] 

机构地区：[1]石家庄铁道大学材料科学与工程学院,河北石家庄050043 [2]石家庄市张石高速公路筹建处,河北石家庄050000

出　　处：《石家庄铁道大学学报（自然科学版）》2013年第2期92-95,共4页Journal of Shijiazhuang Tiedao University(Natural Science Edition)

基　　金：河北省自然科学基金(E2011210009);石家庄市科技支撑项目(11107313A);石家庄铁道大学科研启动项目(8110088)

摘　　要：SnO2作为一种典型的宽带隙半导体材料具有许多优异的物理和化学性质,例如极高的电子电导率、可见光透过率和化学稳定性,因此广泛用于光电材料、太阳能电池和气敏材料等各领域。采用溶胶-凝胶法在玻璃基片上制备了Ta掺杂SnO2透明导电薄膜,其中Ta含量在8atom.%左右。Ta:SnO2薄膜的表面形貌较平整,但由于局部应力使薄膜出现了细小的断裂。Ta:SnO2薄膜为金红石结构,结晶程度较高,由于Ta5+、Sn4+离子半径接近,Ta原子溶入SnO2的晶格中置换Sn原子位置形成了稳定均一的固溶体结构,因此没有第二相出现,但是其晶格常数略有变化。Tin oxide （SnO2） is a n-type wide band gap semiconductor with unique physical and chemical behaviors, such as high electronic conductivity, high visible light transparency, and high chemical stability. Therefore, Tin oxide are widely used as photovoltaic materials, solar cells, gas sensors, etc. In this paper, sol- gel method is used to prepared tantalum （Ta） doped SnO2 transparent conductive film on glass substrates. The tantalum content of is about 8% and the surface morphology of the prepared thin film is very smooth, but the fracture due to the local stress is very clear. The Ta doped SnOz thin films is in the rutile structure, with a high degree of crystallization. Due to the close ionic radius of Ta5 ＋ and Sn4 ＋~ , Ta atom dissolves in the SnO2 lattice to replace Sn atom, resulting in a stable homogeneous solid solution structure. So there is no second phase appea- ring, but its lattice constant is slightly changed.

关 键 词：溶胶凝胶法 Ta掺杂SnO2 光学和电子性质 

分 类 号：TQ136[化学工程—无机化工]