钇掺杂氧化锌薄膜的研究进展  

Research Progress of Yttrium-Doped Zinc Oxide Thin Films

作　　者：王丹丹[1] 王卿璞[1] 王汉斌[1] 江秋怡[1] 武丽伟[1] 李福杰[1] 

机构地区：[1]山东大学物理学院,济南250100

出　　处：《半导体技术》2013年第6期407-412,442,共7页Semiconductor Technology

基　　金：国家自然科学基金项目(51042006);山东省科技攻关项目(2009GG10007009);国家基础科学人才培养基金项目(J0730318)

摘　　要：氧化锌材料具有优异的光电特性,易于掺杂,近年来一直是半导体材料领域关注的热点。稀土元素钇掺杂氧化锌(YZO)薄膜属于新兴的研究方向,相关研究还处于初级阶段。评述了国内外关于YZO薄膜的最新研究进展。分析比较了该薄膜材料的主要制备方法,包括溶胶-凝胶、共沉淀、磁控溅射、电化学沉积等。着重介绍了目前YZO薄膜的主要研究成果,分析结果表明适当浓度的Y掺杂,能够改善氧化锌的晶格结构,增强紫外辐射强度,提高可见光透过率,降低电阻率。探讨了YZO透明导电薄膜在短波长发光、平板显示、太阳电池等光电器件领域的应用前景。In recent years,zinc oxide has been the focus of semiconductor material fields,due to its excellent photoelectric and easy doping characteristics.Rare earth element yttrium-doped zinc oxide（YZO）thin film is a new research field and the research is still in its infancy.The latest research progress on YZO transparent conductive film is reviewed.Preparation methods of the material are analyzed and compared,including sol-gel,co-precipitation,magnetron sputtering and electrochemical deposition.A particular emphasis is given to the main research results of YZO.Analysis results show that the doping of yttrium with suitable concentration can improve the lattice structure of ZnO film,enhance the strength of ultraviolet radiation,increase the visible light transmittance and reduce the resistivity.The application prospects of YZO thin film in short-wavelength light emitting,flat panel displays,solar cells and other optoelectronic devices are discussed.

关 键 词：钇掺杂 氧化锌 钇掺杂氧化锌薄膜 紫外辐射 透明导电 

分 类 号：TN304.21[电子电信—物理电子学]