Hierarchical Porous Patterns of n-type 6H-SiC Crystals via Photoelectrochemical Etching  

作　　者：Lihuan Wang Huihui Shao Xiaobo Hu Xiangang Xu 

机构地区：[1]State Key Laboratory of Crystal Materials,Shandong University

出　　处：《Journal of Materials Science & Technology》2013年第7期655-661,共7页材料科学技术（英文版）

基　　金：supported by the National Basic Research Program of China(Nos.2011CB301904 and 2009CB930503);the National Natural Science Foundation of China(Nos. 51021062 and 11134006)

摘　　要：Hierarchical porous patterns have been fabricated on the C face, Si face, and cross section of n-type 6H-SiC crystal via photo-electrochemical etching using HF/C2H5OH and HF/H2O2 as electrolytes. The porous layer displayed multiple and multiscale microstructures on different faces, including stalactite-like, sponge-like and dendritic porous structures on C face, echinoid micro-patterns on Si face, and columnar and keel-shaped micro-patterns on the cross section. The formation of hierarchical porous pattern is ascribed to the dynamic competition balance between the electrochemical oxidation rate and the oxide removal rate. It was found that increasing the ionic strength of the electrolyte can obviously disturb the surface morphology of the porous SiC during the photo-electrochemical etching. Possible mechanisms for selective etching were further discussed.Hierarchical porous patterns have been fabricated on the C face, Si face, and cross section of n-type 6H-SiC crystal via photo-electrochemical etching using HF/C2H5OH and HF/H2O2 as electrolytes. The porous layer displayed multiple and multiscale microstructures on different faces, including stalactite-like, sponge-like and dendritic porous structures on C face, echinoid micro-patterns on Si face, and columnar and keel-shaped micro-patterns on the cross section. The formation of hierarchical porous pattern is ascribed to the dynamic competition balance between the electrochemical oxidation rate and the oxide removal rate. It was found that increasing the ionic strength of the electrolyte can obviously disturb the surface morphology of the porous SiC during the photo-electrochemical etching. Possible mechanisms for selective etching were further discussed.

关 键 词：SiC Photo-electrochemical etching Porous patterning 

分 类 号：TN304.24[电子电信—物理电子学]