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机构地区:[1]Engineering Research Center on Communication Devices(Ministry of Education),School of Computer and Communication Engineering,Tianjin University of Technology [2]Tianjin Key Laboratory of Film Electronic and Communication Device,School of Electronic Information Engineering,Tianjin University of Technology
出 处:《Chinese Physics B》2013年第6期413-417,共5页中国物理B(英文版)
基 金:supported by the National Natural Science Foundation of China (Grant No. 11004152);the Science Fund of Tianjin Education Commission (Grant Nos. 20090715 and 20110704)
摘 要:In this paper, spectral hole depth dependence on temperature below 10 K in Tm^3+ :YAG crystal is investigated in detail. A novel model is proposed to analyze the temperature dependence on the spectral hole. By using the proposed model, we theoretically deduce the temperature dependence of spectral hole depth. The results are compared with experimental results and they are in good agreement. According to the theoretic results, the optimum temperature in experiment can be found.In this paper, spectral hole depth dependence on temperature below 10 K in Tm^3+ :YAG crystal is investigated in detail. A novel model is proposed to analyze the temperature dependence on the spectral hole. By using the proposed model, we theoretically deduce the temperature dependence of spectral hole depth. The results are compared with experimental results and they are in good agreement. According to the theoretic results, the optimum temperature in experiment can be found.
关 键 词:phonon process spectral hole depth spectral hole width Tm^3+ :YAG
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