Equivalent oxide thickness scaling of Al_2O_3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation  

作　　者：孙家宝 杨周伟 耿阳 卢红亮 吴汪然 叶向东 张卫 施毅 赵毅 

机构地区：[1]School of Electronic Science and Engineering,Nanjing University [2]State Key Laboratory of ASIC and System,Fudan University [3]State Key Laboratory of Silicon Materials,Zhejiang University

出　　处：《Chinese Physics B》2013年第6期561-564,共4页中国物理B（英文版）

基　　金：supported by the National Program for Key Basic Research Projects (973 Program) of China (Grant No. 2011CBA00607);the National Natural Science Foundation of China (Grant Nos. 61106089 and 51102048);the National Science and Technology Major Projects (Grant No. 2009ZX02035);the State Key Laboratory of ASIC and System Project (Grant No. 11MS017);the Open Funds of State Key Laboratory of ASIC and System at Fudan University (Grant No. 10KF001)

摘　　要：Aluminum-oxide films deposited as gate dielectrics on germanium （Ge） by atomic layer deposition were post oxidized in an ozone atmosphere. No additional interfacial layer was electron microscopy and X-ray photoelectron spectroscopy detected by the high-resolution cross-sectional transmission measurements made after the ozone post oxidation （OPO） treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.Aluminum-oxide films deposited as gate dielectrics on germanium （Ge） by atomic layer deposition were post oxidized in an ozone atmosphere. No additional interfacial layer was electron microscopy and X-ray photoelectron spectroscopy detected by the high-resolution cross-sectional transmission measurements made after the ozone post oxidation （OPO） treatment. Decreases in the equivalent oxide thickness of the OPO-treated Al2O3/Ge MOS capacitors were confirmed. Furthermore, a continuous decrease in the gate leakage current was achieved with increasing OPO treatment time. The results can be attributed to the film quality having been improved by the OPO treatment.

关 键 词：Al2O3 gate dielectric ozone post oxidation equivalent oxide thickness electrical properties 

分 类 号：TM53[电气工程—电器]