The charge storage characteristics of ZrO_2 nanocrystallite-based charge trap nonvolatile memory  

作　　者：汤振杰 李荣 殷江 

机构地区：[1]College of Physics and Electronic Engineering,Anyang Normal University [2]School of Mathematics and Statistics,Anyang Normal University [3]Department of Materials Science and Engineering,National Laboratory of Solid State Microstructures,Nanjing University

出　　处：《Chinese Physics B》2013年第6期565-569,共5页中国物理B（英文版）

基　　金：supported by the Science Fund of Educational Department of Henan Province of China (Grant No. 13A140021);the National Natural Science Foundation of China (Grant Nos. 50972054 and 61176124);the State Key Program for Basic Research of China (Grant No. 2010CB934201);the State Key Program for Science and Technology of China (Grant No. 2009ZX02039-004)

摘　　要：ZrO2 nanocrystallite-based charge trap flash memory capacitors incorporating a （ZrO2）0.6（SiO2）0.4 pseudobinary high-k oxide film as the charge trapping layer were prepared and investigated. The precipitation reaction in the charge trapping layer, forming ZrO2 nanocrystallites during rapid thermal annealing, was investigated by transmission electron microscopy and X-ray diffraction. It was observed that a ZrO2 nanocrystallite-based memory capacitor after post-annealing at 850 ℃ for 60 s exhibits a maximum memory window of about 6.8 V, good endurance and a low charge loss of -25% over a period of 10 years （determined by extrapolating the charge loss curve measured experimentally）, even at 85 ℃. Such 850 ℃-annealed memory capacitors appear to be candidates for future nonvolatile flash memory device applications.ZrO2 nanocrystallite-based charge trap flash memory capacitors incorporating a （ZrO2）0.6（SiO2）0.4 pseudobinary high-k oxide film as the charge trapping layer were prepared and investigated. The precipitation reaction in the charge trapping layer, forming ZrO2 nanocrystallites during rapid thermal annealing, was investigated by transmission electron microscopy and X-ray diffraction. It was observed that a ZrO2 nanocrystallite-based memory capacitor after post-annealing at 850 ℃ for 60 s exhibits a maximum memory window of about 6.8 V, good endurance and a low charge loss of -25% over a period of 10 years （determined by extrapolating the charge loss curve measured experimentally）, even at 85 ℃. Such 850 ℃-annealed memory capacitors appear to be candidates for future nonvolatile flash memory device applications.

关 键 词：charge storage ZrO2 nanocrystallites atomic layer deposition pulse laser deposition 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]