914nm LD端面抽运Nd:YVO_4 100kHz皮秒再生放大器  

100 kHz Nd:YVO_4 Picosecond Regenerative Amplifier End-Pumped by 914 nm Laser Diode

作　　者：陈檬[1] 常亮[1] 杨超[1] 陈立元[1] 李港[1] 

机构地区：[1]北京工业大学激光工程研究院,北京100124

出　　处：《中国激光》2013年第6期88-91,共4页Chinese Journal of Lasers

基　　金：国家自然科学基金(61144007)资助课题

摘　　要：采用Nd:YVO4晶体带内抽运波长914nm,降低激光二极管(LD)连续抽运时晶体的热负荷和端面热应力,提高高重复频率Nd:YVO4皮秒再生放大器输出性能。研究分析了普克尔盒加压脉宽对工作频率为100kHz的Nd:YVO4再生放大器输出脉冲稳定性的影响,在吸收914nm抽运功率为68W,通过控制普克尔盒加压脉宽,实现了对单脉冲能量为1nJ、脉宽为5.7ps、频率为42.7MHz的全固态Nd:YVO4半导体可饱和吸收镜(SESAM)锁模种子激光脉冲的稳定的100kHz皮秒激光再生放大,输出平均功率为21.2W。914 nm wavelength in-band pumping of Nd： YV04 reduces crystal thermal load and end-surface thermal stress, then the performance of Nd： YV04 regenerative amplifier is enhanced at high repetition rate. The influence of high-voltage-duration applied to Pockel-cell on Nd： YVO4 regenerative amplifier with output pulse stability of 100 kHz is investigated in detail. When 68 W pumping power at 914 nm center wavelength is absorbed by the Nd：YVO4 crystal and appropriated high-voltage-duration is applied to Pockel-cell, the Nd： YV04 regenerative amplifier that produces stable 21.2 W average power at 100 kHz repetition rate is seeded by a low power of 1 nJ and 5.7 ps duration semiconductor saturable absorber mirror （SESAM） mode-locked Nd.＇ YV04 laser with repetition rate of 42.7 MHz.

关 键 词：激光技术 全固态激光器 再生放大技术 皮秒脉冲 ND YVO4晶体 914 nm波长 

分 类 号：O436[机械工程—光学工程]