用化学气相沉积法制备石墨烯薄膜及其电学性能研究  

Fabrication and electrical properties of graphene prepared by chemical vapor deposition

作　　者：张浩[1] 董洁文[1] 吕孝鹏[1] 王鑫[1] 许元鲜[1] 邵雪峰[1] 王珊珊[1] 邓雅丽[1] 陈康烨[1] 马锡英[1] 

机构地区：[1]苏州科技学院数理学院,江苏苏州215011

出　　处：《物理实验》2013年第6期44-48,共5页Physics Experimentation

基　　金：国家自然科学基金(No.60976071);苏州市科技计划项目(No.SYG201121)

摘　　要：以甲烷作为反应气体、利用高温化学气相沉积法分别在纯硅片和镀镍镉过渡层硅片上沉积石墨烯薄膜,应用金相显微镜和电学特性测试分析了700,900,950℃温度下生长的石墨烯薄膜的表面形貌、伏安特性及其他电学特性.发现镍铬过渡层具有显著的催化作用,可有效降低石墨烯的生长温度.随着生长温度的升高,样品中电子迁移率随之增大,伏安特性的线性度也越好.对纯硅片上生长的石墨烯,发现高温有利于甲烷有效分解和成核,可有效提高表面电子浓度和电子迁移率,其迁移率可达到2.52×104 cm2/V.Graphene thin films were deposited on pure Si and NiCr buffered Si substrates by chemical vapor deposition vs CH4 as reactive gas. The surface morphology, IV curve and other elec trical properties of grapheme films deposited at 700, 900 and 950 ℃ were analyzed. It was found that the NiCr buffer on Si substrate had a significant catalyst action that could lower the growth tempera ture of grapheme. With the increase of temperature, the electron mobility of the samples increased, and the IV curves of the samples showed good linear behavior as well. For pure Si substrates, higher temperature enhanced CH4 decomposition and nucleation. At the same time, it could efficiently im prove surface carrier density and electron mobility. The electron mobility of the graphene film grown at 950 ℃ was uo to 2.52X10^4 cm2/V.

关 键 词：石墨烯 化学气相沉积法 金相显微镜 电学性质 

分 类 号：O484.42[理学—固体物理]