In掺杂ZnO纳米带电学性质的研究  

The Electrical Characteristics of In-doped ZnO Nanobelt

作　　者：潘思明[1] 高红[1] 郎颖[1] 李凯[1] 唐欣月[1] 顾海佳[1] 

机构地区：[1]哈尔滨师范大学

出　　处：《哈尔滨师范大学自然科学学报》2012年第6期33-35,38,共4页Natural Science Journal of Harbin Normal University

基　　金：黑龙江省高等教育教学改革项目资助

摘　　要：利用化学气相沉积法成功合成了In掺杂ZnO纳米带.通过扫描电子显微镜、X射线能谱仪对样品进行表征.利用微栅模板法制备欧姆接触的光电器件,研究了器件的伏安特性曲线及紫外光敏特性.结果表明,In掺杂ZnO纳米带的导电能力远远高于纯ZnO纳米带,电阻仅为纯ZnO纳米带的1/50,但是其光敏特性不及纯ZnO纳米带,开关比仅为纯ZnO纳米带的1/20.In - doped ZnO nanobehs are synthesized by chemical vapor deposition （CVD） method. The structure and composition of the nanobehs are investigated by Scanning Electron Microscopy （SEM） , Energy Dispersive X -Ray Spectroscopy （EDX）, and X -Ray Diffraction （XRD）. The In -doped ZnO nanobehs UV sensors have been fabricated by micro - grid template method. The current - voltage （I - V ） characteristics and the photoresponses of In - doped ZnO nanobehs are measured. Comparing with pure ZnO, In - doped ZnO nanobelt shows better electrical conductivity and the resistance of In - doped ZnO nanobelt is only one fiftieth of that of ZnO nanobelt. But the sensitivity of In - doped ZnO nanobelt UV sensor is lower than that of ZnO nanobelt and the photo - to - dark current ratio of In - doped ZnO nanobelt is only one twentieth of that of ZnO nanobeh.

关 键 词：In掺杂ZnO纳米带 微栅模板法 伏安特性 光响应 

分 类 号：TN304.21[电子电信—物理电子学]