低温下单根In掺杂ZnO纳米带电学性质的研究  

The Electrical Properties of Single In Doped ZnO Nanobelt at Low Temperature

作　　者：李铭杰[1] 李江禄[1] 李凯[1] 

机构地区：[1]哈尔滨师范大学

出　　处：《哈尔滨师范大学自然科学学报》2012年第6期41-44,共4页Natural Science Journal of Harbin Normal University

基　　金：黑龙江省教育厅科学技术研究重点项目资助(12521z012)

摘　　要：采用化学气相沉积(CVD)的方法合成了In掺杂ZnO纳米带,并且用简单、廉价的微栅模板法为单根纳米带制作了微电极,研究了在室温到20 K低温范围内单根In掺杂ZnO纳米带电阻随温度的变化.结果表明,在140～290 K区间单根ZnO∶In纳米带电子输运机制符合热激活输运机制.In doped ZnO nanobelts are synthesized by chemical vapors deposition method on silica substrate. Single In doped ZnO nanobelt device is assembled using the micro -grid template method. It is found that there are two different conduction mechanisms through the single In doped ZnO nanobelt, according to researching the temperature dependence of the resistance of the single nanobeh at 20 -290 K. The results show that the thermally activated conduction is dominating in the higher temperature range （ 140 - 290 K）.

关 键 词：In掺杂ZnO 纳米带 低温 输运机制 

分 类 号：O484[理学—固体物理]