含负折射率材料的光量子阱频率特性研究  

Study of Photonic Quantum Well Structures Consisting of Photonic Crystal Containing Negative-index Materials

作　　者：刘丽想[1,2] 董丽娟[1,2] 刘艳红[1,2] 石云龙[1] 

机构地区：[1]山西大同大学固体物理研究所,山西大同037009 [2]山西大同大学物理与电子科学学院,山西大同037009

出　　处：《山西大同大学学报（自然科学版）》2013年第2期16-19,共4页Journal of Shanxi Datong University(Natural Science Edition)

基　　金：山西省高等学校大学生创新创业训练项目[2011-3]

摘　　要：基于平均折射率为零的光子晶体的能带理论和负折射率材料的频率响应特性设计了特定频段的光量子阱结构,并对频率响应特性随阱宽和阱内材料的变化规律进行了对比和分析。该量子阱不仅具有折射率为零的光子晶体的带隙优点,还具有局域模调控简单的特点。实验结果与理论结果相符合。Properties of photonic quantum well structures composed of the photonic crystals containing negative-index materials and the defect of negative-index materials are experimentally studied.In the structure,negative-index materials acting as a well is sandwiched with barrier photonic crystals on both sides.Models are fabricated by transmission lines loaded with series capacitor and shunt inductor.It is not only relatively simple compared with the conventional photonic quantum well,but also have the advantage for adjusting.It keeps the important characteristics of zero-average-index gap.Simultaneously,the number of the tunneling modes can be tuned by adjusting the thickness of negative-index materials in the well.Through changing the fabrication parameters and lumped elements,one can adjust the band-gap and the tunneling modes in frequency.It can be used to miniaturize multichannel filters.

关 键 词：人工微结构材料 负折射率材料 复合左右手传输线 

分 类 号：O441.4[理学—电磁学]