催化剂辅助化学气相沉积法制备InN纳米线  

Fabrication of InN Nanowires by the Catalyst-assisted Chemical Vapor Deposition Method

作　　者：郑春蕊[1,2] 

机构地区：[1]石家庄经济学院材料科学与工程研究所,石家庄050031 [2]北京理工大学材料科学与工程学院,北京100081

出　　处：《材料导报（纳米与新材料专辑）》2013年第1期4-5,10,共3页

摘　　要：采用催化剂辅助化学气相沉积法,通过固-液-气(V-L-S)机理控制在硅衬底上制备了高质量的InN纳米线。利用FESEM、XRD、HRTEM对制备的InN纳米线的表面形貌和结构进行了表征。分析表明合成的InN纳米线为标准的六方纤锌矿结构,纳米线沿[102]方向生长。室温PL光谱表明,制备的InN纳米线在1580nm(0.78eV)处存在很强的无缺陷的带边发射,与六方纤锌矿结构InN单晶发射峰位置一致,表现出良好的光电性能。High-quality single crystalline InN nanowires were obtained on silicon substrate using the catalyst assisted CVI） method via the V-L-S process. The morphologies of the synthesized InN nanowires were characterized by FESENL XRD, HRTEM were employed to measure the lattice structures of the synthesized InN nanowires. Re- sults show that the synthesized InN nanowires has standard wurtzite structure and hexagonal systew. The nanowires grow along the [102] direction. The room temperature photoluminescence （PL） measurements of InN nanowires ex- hibited a strong near-band-edge emission at 1580 nm （0. 78 eV）, according with wurtzite structure InN single crystal emission peak, and without any defects related emissions, which shows its potential applications in optoelectronics.

关 键 词：INN 纳米线化 学气相沉积 

分 类 号：TM23[一般工业技术—材料科学与工程]