Dog Bone栅型MOS场效应晶体管的等效宽长比计算  

Equivalent aspect ratio calculation of MOS field effect transistor with Dog Bone gate

作　　者：孟丽娅[1] 刘泽东[1] 胡大江[1] 岳陈平[1] 喻依虎[1] 

机构地区：[1]重庆大学光电技术及系统教育部重点实验室,重庆400044

出　　处：《重庆大学学报（自然科学版）》2013年第6期98-102,共5页Journal of Chongqing University

基　　金：国家自然科学基金资助项目(61071043);中央高校基本科研业务费资助项目(CDJRC 11200004;CDJXS10120012)

摘　　要：Dog Bone栅型MOS场效应晶体管是一种对称性的、防辐射总剂量效应的版图结构。为了计算其等效宽长比,把它划分为常规结构的主MOS晶体管和非常规结构的边缘MOS晶体管2种类型的并联。借助Silvaco TCAD工艺与器件仿真工具构建了它的模型,分析了主MOS晶体管的宽度、长度和边缘MOS晶体管的多晶硅与有源区的交叠宽度对边缘MOS等效宽长比的影响,得到拟合的Dog Bone栅型MOS晶体管等效宽长比的计算公式。采用CSMC 0.5μm DPTMCMOS混合信号工艺制作了样管,对实验测量值和公式计算值进行比较,Dog Bone栅型MOS场效应晶体管的等效宽长比的计算公式与实验能够较好地吻合。MOS field effect transistor（FET） with Dog Bone shape gate is a symmetric layout structure with hardened radiation-total-dose effect（RTDE）.In order to calculate its equivalent aspect ratio,it is divided into a regular MOS FET（host MOS） and two parasitic MOS FETs（edge MOS） in parallel.The model of this device is constructed in Silvaco TCAD software,then a fitted formula of the equivalent aspect ratio is derived based on the simulation of drain current with respect to the width and length of host MOS,and overlap width between polysilicon and active area of edge MOS.The comparison between the fitted formula and measurements of sample transistors taped out in CSMC 0.5 μm DPTM CMOS mixed-signal process indicates the fitted formula for equivalent aspect ratio of Dog Bone Gate MOS FET matches the measurement.

关 键 词：DOG BONE MOS 防辐射加固 器件仿真 

分 类 号：TN386.1[电子电信—物理电子学]