含缺陷一维光子晶体电场分布研究  

Research on Properties of Light Field Distribution in One-dimensional Photonic Crystals Including Defect

作　　者：王婧[1] 巴诺[1] 吴向尧[1] 刘晓静[1] 张斯淇[1] 李宏[1] 吴坤朋[1] 郭义庆[2] 

机构地区：[1]吉林师范大学物理学院,吉林四平136000 [2]中国科学院高能物理研究所,北京100049

出　　处：《光电子技术》2013年第2期82-87,92,共7页Optoelectronic Technology

基　　金：国家自然科学基金资助项目(11247201)

摘　　要：文章给出了任意入射角时光在一维光子晶体中的透射率及电场分布的解析式,研究了不同的入射角、入射光角频率、缺陷层折射率及光子晶体周期数对含缺陷的一维光子晶体场强分布的影响,同时研究了缺陷层的吸收系数对光子晶体透射率及场强分布的影响,所得到的一些结论为光子晶体的制备及应用提供新的有价值的理论依据。In this paper, the expression of transmissivity and the electric field intensity distribution in photonic crystals at arbitrary incidence angle is presented,, tThe effects of different incident angle, angle frequency of incidence light, defect model refractive index and period number on the election field distribution in photonic crystals are researched , together with the effect of absorbing coefficient on the transmissivity and electric field distribution respectively. Some results which can offer theoretical basis for photonic crystals design and application are obtained.

关 键 词：光子晶体 缺陷 电场分布 

分 类 号：O734[理学—晶体学]