Charging Effect in Plasma Etching Mask of Hole Array  

作　　者：张鹏 王俊 孙阳 丁泽军 

机构地区：[1]Hefei National Laboratory for Physical Sciences at Microscale and Department of Physic,University of Science and Technology of China [2]JET Plasma Equipment Design Company [3]Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics,University of Science and Technology of China

出　　处：《Plasma Science and Technology》2013年第6期570-576,共7页等离子体科学和技术（英文版）

基　　金：supported by National Natural Science Foundation of China(Nos.11074232 and 10874160);National Basic Research Program of China(Nos.2011CB932801 and 2012CB933702);Ministry of Education of China(No.20123402110034);"111" project

摘　　要：It has already been found that the round shape of holes can be changed into hexagonal shape during plasma etching processes.This work aims to understand the mechanism behind such a shape change using particle simulation method.The distribution of electric field produced by electrons was calculated for different heights from the mask surface.It is found that the field strength reaches its maximum around a hole edge and becomes the weakest between two holes. The field strength is weakened as moving away from the surface.The spatial distribution of this electric field shows obvious hexagonal shape around a hole edge at some distances from the surface. This charging distribution then affects the trajectories of ions that fall on a mask surface so that the round hole edge is etched to become a hexagonal hole edge.The changing of this hole shape will again alter the spatial distribution of electric field to enhance the charging effect dynamically.It has already been found that the round shape of holes can be changed into hexagonal shape during plasma etching processes.This work aims to understand the mechanism behind such a shape change using particle simulation method.The distribution of electric field produced by electrons was calculated for different heights from the mask surface.It is found that the field strength reaches its maximum around a hole edge and becomes the weakest between two holes. The field strength is weakened as moving away from the surface.The spatial distribution of this electric field shows obvious hexagonal shape around a hole edge at some distances from the surface. This charging distribution then affects the trajectories of ions that fall on a mask surface so that the round hole edge is etched to become a hexagonal hole edge.The changing of this hole shape will again alter the spatial distribution of electric field to enhance the charging effect dynamically.

关 键 词：plasma etching charging effect hole array 

分 类 号：O539[理学—等离子体物理]