Improved current efficiency in organic light-emitting devices with a hole blocking layer  

作　　者：杨惠山 

机构地区：[1]College of Physics and Information Engineering,Quanzhou Normal University

出　　处：《Optoelectronics Letters》2013年第4期250-253,共4页光电子快报（英文版）

基　　金：the Natural Science Foundation of Fujian Province of China (No.2011J01359);the Project of Science and Technology Research of the Education Department of Fujian Province of China (No.JK2011043);the Project of Science and Technology Research of Quanzhou in Fujian Provice of China (No.2011G16)

摘　　要：A hole-blocking layer (HBL) of 4,7-diphenyl-1,10-phenanthroline (BPhen) is incorporated between the emitting layer (EML) and the electron transport layer (ETL) for a tris-(8-hydroxyqunoline)aluminum based organic light-emitting device (OLED). Such a structure helps to reduce the hole-leakage to the cathode, resulting in an improved current effi-ciency. The BPhen improves the balance of hole and electron injections. The current efficiency is improved compared with that of the device without the blocking layer. The highest luminous efficiency of the device with 6 nm BPhen acting as a blocking layer is 3.44 cd/A at 8 V, which is improved by nearly 1.5 times as compared with that of the de-vice without it.A hole-blocking layer （HBL） of 4,7-diphenyl-1,10-phenanthroline （BPhen） is incorporated between the emitting layer （EML） and the electron transport layer （ETL）for a tris-（8-hydroxyqunoline）aluminum based organic light-emitting device （OLED）. Such a structure helps to reduce the hole-leakage to the cathode, resulting in an improved current efficiency. The BPhen improves the balance of hole and electron injections. The current efficiency is improved compared with that of the device without the blocking layer. The highest luminous efficiency of the device with 6 nm BPhen acting as a blocking layer is 3.44 cd/A at 8 V, which is improved by nearly 1.5 times as compared with that of the device without it.

关 键 词：空穴阻挡层 电流效率 有机发光器件 有机电致发光器件 电子传输层 移动设备 OLED 发光效率 

分 类 号：TN383.1[电子电信—物理电子学] TF821[冶金工程—有色金属冶金]