影响IGBT器件短路能力的一种栅极振荡现象研究  

A Gate oscillation research to IGBT short circuit capability

作　　者：闻永祥 范伟宏[1] 顾悦吉 刘琛[1] 刘慧勇[1] 

机构地区：[1]杭州士兰集成电路有限公司技术中心,浙江杭州310018

出　　处：《中国集成电路》2013年第7期42-46,共5页China lntegrated Circuit

摘　　要：功率器件IGBT由于其优异特性而广泛应用于电机、电焊机和功率开关等领域,是功率器件的主流产品之一。本文首先介绍了IGBT的短路特性及测试方法和条件,分析了栅极异常振荡对IGBT的短路电流的影响,提出了改善IGBT器件短路能力的方法。Power IGBT is widely used due to its excellent performance in areas such motor drives, welding machines and switch power supplies. IGBT short circuit characteristics and measurement methods are introduced briefly, then Gate abnormal oscillation induced IGBT short circuit damages are researched. Finally, a method to optimize the IGBT Gate oscillation is proposed to improve the IGBT short circuit capability.

关 键 词：绝缘栅晶体管 短路电流特性 栅极振荡 

分 类 号：TN322.8[电子电信—物理电子学]