The effect of InAs quantum-dot size and interdot distance on GaInP/GaAs/GaInAs/Ge multi-junction tandem solar cells  

作　　者：屈晓声 张思思 包鸿音 熊丽玲 

机构地区：[1]School of Electronic and Information Engineering,Beihang University

出　　处：《Journal of Semiconductors》2013年第6期11-15,共5页半导体学报（英文版）

摘　　要：A metamorphic GaInP/GaAs/GaInAs/Ge multi-junction solar cell with InAs quantum dots is investigated, and the analytical expression of the energy conversion efficiency on the multi-junction tandem solar cell is derived using the detailed balance principle and the Kronig-Penney model.The influences of interdot distance, quantum-dot size and the intermediate band location on the energy conversion efficiency are studied.This shows that the maximum efficiency,as a function of quantum-dot size and distance,is about 60.15%under the maximum concentration for only one InAs/GaAs subcell,and is even up to 39.69%for the overall cell.In addition,other efficiency factors such as current mismatch,the formation of a quasicontinuum conduction band and concentrated light are examined.A metamorphic GaInP/GaAs/GaInAs/Ge multi-junction solar cell with InAs quantum dots is investigated, and the analytical expression of the energy conversion efficiency on the multi-junction tandem solar cell is derived using the detailed balance principle and the Kronig-Penney model.The influences of interdot distance, quantum-dot size and the intermediate band location on the energy conversion efficiency are studied.This shows that the maximum efficiency,as a function of quantum-dot size and distance,is about 60.15%under the maximum concentration for only one InAs/GaAs subcell,and is even up to 39.69%for the overall cell.In addition,other efficiency factors such as current mismatch,the formation of a quasicontinuum conduction band and concentrated light are examined.

关 键 词：multi-junction solar cell Kronig-Penney model quantum dot intermediate band high efficiency 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TN304[电子电信—物理电子学]