An analytical model of the electric field distributions of buried superjunction devices  

作　　者：黄海猛 陈星弼 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Journal of Semiconductors》2013年第6期68-71,共4页半导体学报（英文版）

摘　　要：An analytical model of the electric field distributions of buried superjunction structures,based on the charge superposition method and Green＇s function approach,is derived.An accurate approximation of the exact analytical model of the vertical electric field is also proposed and demonstrated by numerical simulation.The influence of the dimension and doping concentration of each layer on the electric field is discussed in detail,and the breakdown voltage is demonstrated by simulations.An analytical model of the electric field distributions of buried superjunction structures,based on the charge superposition method and Green＇s function approach,is derived.An accurate approximation of the exact analytical model of the vertical electric field is also proposed and demonstrated by numerical simulation.The influence of the dimension and doping concentration of each layer on the electric field is discussed in detail,and the breakdown voltage is demonstrated by simulations.

关 键 词：analytical model superjunction devices electric field distributions breakdown voltage 

分 类 号：O441.4[理学—电磁学]