Avalanche-enhanced photocurrents in pin silicon waveguides at 1550 nm wavelength  

作　　者：赵勇 徐超 江晓清 葛辉良 

机构地区：[1]Department of Information Science and Electronics Engineering,Zhejiang University [2]Hangzhou Applied Acoustics Research Institute

出　　处：《Journal of Semiconductors》2013年第6期81-84,共4页半导体学报（英文版）

基　　金：supported by the Natural Basic Research Program of China(No.2013CB632105);the National Natural Science Foundation of China(No.61177055)

摘　　要：The photocurrent effect in pin silicon waveguides at 1550 nm wavelength is experimentally investigated. The photocurrent is mainly attributed to surface-state absorption,defect-state absorption and/or two-photon absorption.Experimental results show that the photocurrent is enhanced by the avalanche effect.A pin silicon waveguide with an intrinsic region width of 3.4μm and a length of 2000μm achieves a responsivity of 4.6 mA/W and an avalanche multiplication factor of about five.The photocurrent effect in pin silicon waveguides at 1550 nm wavelength is experimentally investigated. The photocurrent is mainly attributed to surface-state absorption,defect-state absorption and/or two-photon absorption.Experimental results show that the photocurrent is enhanced by the avalanche effect.A pin silicon waveguide with an intrinsic region width of 3.4μm and a length of 2000μm achieves a responsivity of 4.6 mA/W and an avalanche multiplication factor of about five.

关 键 词：PHOTODETECTOR silicon waveguide PHOTOCURRENT avalanche effect 

分 类 号：TN312.7[电子电信—物理电子学]