A noise immunity improved level shift structure for a 600 V HVIC  

作　　者：张允武 祝靖 孙国栋 刘翠春 孙伟峰 钱钦松 

机构地区：[1]National ASIC System Engineering Research Center,Southeast University

出　　处：《Journal of Semiconductors》2013年第6期138-142,共5页半导体学报（英文版）

摘　　要：A novel level shift circuit featuring with high dV/dt noise immunity and improved negative V_S capacity is proposed in this paper.Compared with the conventional structure,the proposed circuit adopting two cross-coupled PMOS transistors realizes the selective filtering ability by exploiting the path which filters out the noise introduced by the dV/dt.In addition,a differential noise cancellation circuit is proposed to enhance the noise immunity further.Meanwhile,the negative V_S capacity is improved by unifying the detected reference voltage and the logic block＇s threshold voltage.A high voltage half bridge gate drive IC adopting the presented structure is experimentally realized by using a usual 600 V BCD process and achieves the stable operation up to 65 V/ns of the dV/dt characteristics.A novel level shift circuit featuring with high dV/dt noise immunity and improved negative V_S capacity is proposed in this paper.Compared with the conventional structure,the proposed circuit adopting two cross-coupled PMOS transistors realizes the selective filtering ability by exploiting the path which filters out the noise introduced by the dV/dt.In addition,a differential noise cancellation circuit is proposed to enhance the noise immunity further.Meanwhile,the negative V_S capacity is improved by unifying the detected reference voltage and the logic block＇s threshold voltage.A high voltage half bridge gate drive IC adopting the presented structure is experimentally realized by using a usual 600 V BCD process and achieves the stable operation up to 65 V/ns of the dV/dt characteristics.

关 键 词：gate driver half bridge dV/dt noise level shift negative V_S capacity 

分 类 号：TN43[电子电信—微电子学与固体电子学]