Plasma-enhanced atomic layer deposition of Co using Co(MeCp)_2 precursor  

作　　者：Jusang Park Han-Bo-Ram Lee Doyoung Kim Jaehong Yoon Clement Lansalot Julien Gatineau Henri Chevrel Hyungjun Kim 

机构地区：[1]School of Electrical and Electronic Engineering,Yonsei University,Seoul,120-749,Korea [2]School of Materials Science and Engineering,Incheon National University,Incheon,Korea [3]School of Electrical and Electronic Engineering,Ulsan College,Ulsan,680-749,Korea [4]Air Liquide Laboratories,Wadai 28,Tsukuba,Ibaraki Pref.,Japan

出　　处：《Journal of Energy Chemistry》2013年第3期403-407,共5页能源化学（英文版）

基　　金：supported by the Technology Innovation Program Industrial Strategic Technology Development Program(10035430);Development of reliable fine-pitch metallization technologies funded by the Ministry of Knowledge Economy MKE,Korea.The synchrotron radiation XRD analysis was performed at Pohang Light Source beam line 3C2

摘　　要：Cobalt （Co） thermal or plasma enhanced atomic layer deposition （PE-ALD） was investigated using a novel metal organic precursor, Co（MeCp）2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100℃. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300℃. The growth characteristics and films properties of PE-ALD Co using bis（η-methylcyclopentadienyl） Co（II） （Co（MeCp）2） was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt （II） （CoCp2） and cyclopentadienyl isopropyl acetamidinato-cobalt （Co（CpAMD））.Cobalt （Co） thermal or plasma enhanced atomic layer deposition （PE-ALD） was investigated using a novel metal organic precursor, Co（MeCp）2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100℃. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300℃. The growth characteristics and films properties of PE-ALD Co using bis（η-methylcyclopentadienyl） Co（II） （Co（MeCp）2） was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt （II） （CoCp2） and cyclopentadienyl isopropyl acetamidinato-cobalt （Co（CpAMD））.

关 键 词：PE-ALD Th-ALD cobalt metal thin films metal organic precursors 

分 类 号：O53[理学—等离子体物理]