利用半导体InGaN/GaN量子阱的高效太阳电池  

The Efficient Solar Cell Using of the Semiconductor InGaN/GaN Quantum Well

作　　者：田燕[1] 

机构地区：[1]宁夏大学物理电气信息学院,宁夏银川750004

出　　处：《海南师范大学学报（自然科学版）》2013年第2期156-160,188,共6页Journal of Hainan Normal University（Natural Science）

摘　　要：在简述了量子结构太阳电池的发展及研究现状的基础上,从量子结构太阳电池的结构模型出发,用第一性原理来计算极限效率,并根据Shockley-Queisser极限和Pin结的细致平衡原理,对InGaN量子结构太阳电池的极限效率、光学性质和电学性质进行了相关的理论分析和计算,细致平衡模型计算,当势垒为1.73eV,势阱为1.12eV时,电池转换效率为58.4%;势垒为1.89eV,势阱为1.35eV时,电池转换效率为55.3%.On the basis of the summarization of the development and research status of quantum structure solar cell, starting from the structural model of quantum structure solar cells, the First principles was used to calculate the limit efficiency, and according to the Shockley-Queisser limit and the principle of detailed balance of a p-i-n junetion, theoreti- cal analysis and calculation for the limit efficiency, optical properties and electrical properties of the InGaN quantum structure solar cell were carried out. When a barrier is 1.73 eV and potential well is 1.12 eV, the battery conversion efficiency is 58.4%. When a barrier is 1.89 eV and potential well is 1.35 eV, the battery conversion efficiency is 58.4%.

关 键 词：太阳电池 量子结构 极限效率 量子阱 

分 类 号：TM914[电气工程—电力电子与电力传动]