一种碳纳米管场效应管的HSPICE模型  

A HSPICE model of carbon nanotube field effect transistor

作　　者：赵晓辉[1] 蔡理[1] 张鹏[2] 

机构地区：[1]空军工程大学理学院,西安710051 [2]空军工程大学工程学院控制科学与工程系,西安710038

出　　处：《物理学报》2013年第13期140-145,共6页Acta Physica Sinica

基　　金：陕西省自然科学基础研究计划重点项目(批准号:2011JZ015);陕西省电子信息系统综合集成重点实验室基金(批准号:201115Y15)资助的课题~~

摘　　要：为在HSPICE中建立一种计算简单且精度较高的碳纳米管场效应管(carbon nanotube field effect transistor,CNTFET)模型,在CNTFET半经典建模方法的基础上,分析了自洽电势与载流子密度之间的关系,提出用线性近似进行拟合,并推导了自洽电势的显式表达式,从而避免了积分方程的迭代求解过程.然后在HSPICE中建立了相应的CNTFET模型,通过仿真比较,结果表明该模型具有较高的精度,用其构建的逻辑门电路能够实现相应逻辑功能,且运算时间大为减少.In order to apply carbon nanotube field effect transistor （CNTFET） to circuit simulation, maintaining an acceptable accuracy while minimizing computation time is a major problem. To establish a simple and high accuracy CNTFET model in HSPICE, based on the semi-classical model of CNTFET, the relationship between self-consistent electric potential and carrier density is analyzed, linear approximation is used for curve fitting, and explicit expression of self-consistent electric potential is deduced, so that the iterative solution of an integral equation is avoided. Then the CNTFET model in HSPICE is built. Simulation demonstrates that the proposed model can maintain high accuracy, and the logic functions can be realized in corresponding logic gates built with the proposed model, while the computation time is significantly reduced.

关 键 词：碳纳米管场效应管 半经典模型 线性近似拟合 HSPICE仿真 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TN386[电子电信—物理电子学]