Inter valley phonon scattering mechanism in strained Si/(101)Si_(1-x)Ge_x  

作　　者：靳钊 乔丽萍 刘策 郭晨 刘立东 王江安 

机构地区：[1]School of Information Engineering,Chang'an University [2]School of Information Engineering,Tibet University for Nationalities

出　　处：《Journal of Semiconductors》2013年第7期7-10,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.51277012,61162025);the Fundamental Research Funds for the Central Universities of China(Nos.2013G1240120,CHD2011ZD004,CHD2013JC120)

摘　　要：Inter valley scattering has a great impact on carrier mobility of strained Si materials,so based on Fermi＇s golden rule and the theory of Boltzmann collision term approximation,inter valley phonon scattering mechanism of electrons in nano scale strained Si（101） materials is established under the influence of both energy and stress. It shows that inter valley phonon f_2,f_3,g_3 scattering rates decrease markedly in nano scale strained Si（101） materials with increasing stress.The quantized models can provide valuable references to the understanding of strained Si materials and the research on electron carrier mobility.Inter valley scattering has a great impact on carrier mobility of strained Si materials,so based on Fermi＇s golden rule and the theory of Boltzmann collision term approximation,inter valley phonon scattering mechanism of electrons in nano scale strained Si（101） materials is established under the influence of both energy and stress. It shows that inter valley phonon f_2,f_3,g_3 scattering rates decrease markedly in nano scale strained Si（101） materials with increasing stress.The quantized models can provide valuable references to the understanding of strained Si materials and the research on electron carrier mobility.

关 键 词：inter valley scattering strained Si model 

分 类 号：TN304.12[电子电信—物理电子学]