InP-based In_xGa_(1-x)As metamorphic buffers with different mismatch grading rates  

作　　者：方祥 顾溢 陈星佑 周立 曹远迎 李好斯白音 张永刚 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences [2]Key Laboratory of Infrared Imaging Materials and Detectors,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2013年第7期42-46,共5页半导体学报（英文版）

基　　金：Project supported by the National Basic Research Program of China(No.2012CB619202);the National Natural Science Foundation of China(Nos.61275113,61204133);the Founding of CAS Key Laboratory of Infrared Imaging Materials and Detectors

摘　　要：Linearly graded In_xGa_（1-x）As metamorphic buffers with different mismatch grading rates were grown on InP substrate by gas source molecular beam epitaxy.Room temperature photoluminescence spectra show that the sample with lower mismatch grading rate in the buffer has stronger photoluminescence signal,indicating the improved optical property.Atomic force microscope images show that the lower mismatch grading rate in the buffer leads to a slightly rougher surface.The relaxation procedure with two steps in the buffer layers has been observed by X-ray diffraction reciprocal space mapping.The measurements of X-ray diffraction also reveal that the lower mismatch grading rate in the buffer is beneficial for the lattice relaxation and release of residual strain.To further increase the relaxation degree,a lower mismatch grading rate and composition ＂overshoot＂ are suggested.Linearly graded In_xGa_（1-x）As metamorphic buffers with different mismatch grading rates were grown on InP substrate by gas source molecular beam epitaxy.Room temperature photoluminescence spectra show that the sample with lower mismatch grading rate in the buffer has stronger photoluminescence signal,indicating the improved optical property.Atomic force microscope images show that the lower mismatch grading rate in the buffer leads to a slightly rougher surface.The relaxation procedure with two steps in the buffer layers has been observed by X-ray diffraction reciprocal space mapping.The measurements of X-ray diffraction also reveal that the lower mismatch grading rate in the buffer is beneficial for the lattice relaxation and release of residual strain.To further increase the relaxation degree,a lower mismatch grading rate and composition ＂overshoot＂ are suggested.

关 键 词：InxGa1-x As gas source molecular beam epitaxy photoluminescence reciprocal space mapping 

分 类 号：TN304[电子电信—物理电子学]