A low power discrete operation mode for punchthrough phototransistor  

作　　者：周泉 郭树旭 宋静怡 李兆涵 杜国同 常玉春 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,College of Electronic Science and Engineering,Jilin University

出　　处：《Journal of Semiconductors》2013年第7期102-105,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61076046,61274023);the New Century Excellent Talents Support Program of the Ministry of Education;the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(No.ZHD201204)

摘　　要：This paper proposed a discrete operation mode for a punchthrough（PT） phototransistor,which is suitable for low power application,since the bias current is only necessary during the read-out phase.Moreover,simulation results show that with the new operation mode,the photocurrent is much larger than that of continuous operation mode.An ultra-high responsivity of 2×10~7A/W at 10^（-9） W/cm^2 is obtained with a small detector size of 1μm^2.In CMOS image sensor applications,with an integration time of 10 ms,a normalized pixel responsivity of 220 V·m^2/W·s·μm^2 is obtained without any auxiliary amplifier.This paper proposed a discrete operation mode for a punchthrough（PT） phototransistor,which is suitable for low power application,since the bias current is only necessary during the read-out phase.Moreover,simulation results show that with the new operation mode,the photocurrent is much larger than that of continuous operation mode.An ultra-high responsivity of 2×10~7A/W at 10^（-9） W/cm^2 is obtained with a small detector size of 1μm^2.In CMOS image sensor applications,with an integration time of 10 ms,a normalized pixel responsivity of 220 V·m^2/W·s·μm^2 is obtained without any auxiliary amplifier.

关 键 词：punchthrough （PT） phototransistor discrete operation mode low power high responsivity 

分 类 号：TN32[电子电信—物理电子学]