A 65 nm CMOS high efficiency 50 GHz VCO with regard to the coupling effect of inductors  

作　　者：叶禹 田彤 

机构地区：[1]Key Laboratory of Terahertz Solid-State Technology,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences [2]University of Chinese Academy of Sciences [3]Internet of Things System Technology Laboratory,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2013年第7期123-127,共5页半导体学报（英文版）

基　　金：Project supported by the Special Fund on IOT Technology Research from China Government(No.YORSKB 1001)

摘　　要：A 50 GHz cross-coupled voltage controlled oscillator（VCO） considering the coupling effect of inductors based on a 65 nm standard complementary metal oxide semiconductor（CMOS） technology is reported.A pair of inductors has been fabricated,measured and analyzed to characterize the coupling effects of adjacent inductors. The results are then implemented to accurately evaluate the VCO＇s LC tank.By optimizing the tank voltage swing and the buffer＇s operation region,the VCO achieves a maximum efficiency of 11.4%by generating an average output power of 2.5 dBm while only consuming 19.7 mW（including buffers）.The VCO exhibits a phase noise of-87 dBc/Hz at 1 MHz offset,leading to a figure of merit（FoM） of-167.5 dB/Hz and a tuning range of 3.8%（from 48.98 to 50.88 GHz）.A 50 GHz cross-coupled voltage controlled oscillator（VCO） considering the coupling effect of inductors based on a 65 nm standard complementary metal oxide semiconductor（CMOS） technology is reported.A pair of inductors has been fabricated,measured and analyzed to characterize the coupling effects of adjacent inductors. The results are then implemented to accurately evaluate the VCO＇s LC tank.By optimizing the tank voltage swing and the buffer＇s operation region,the VCO achieves a maximum efficiency of 11.4%by generating an average output power of 2.5 dBm while only consuming 19.7 mW（including buffers）.The VCO exhibits a phase noise of-87 dBc/Hz at 1 MHz offset,leading to a figure of merit（FoM） of-167.5 dB/Hz and a tuning range of 3.8%（from 48.98 to 50.88 GHz）.

关 键 词：CMOS coupling effects INDUCTORS LC tank VCO 

分 类 号：TN752[电子电信—电路与系统]