Remote scavenging technology using a Ti/TiN capping layer interposed in a metal/high-k gate stack  

作　　者：马雪丽 韩锴 王文武 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2013年第7期167-169,共3页半导体学报（英文版）

基　　金：Project supported by the Important National Science & Technology Specific Projects,China(No.2009ZX02035);the National Natural Science Foundation of China(Nos.61176091,50932001)

摘　　要：High permittivity materials have been required to replace traditional SiO_2 as the gate dielectric to extend Moore＇s law.However,growth of a thin SiO_2-like interfacial layer（IL） is almost unavoidable during the deposition or subsequent high temperature annealing.This limits the scaling benefits of incorporating high-k dielectrics into transistors.In this work,a promising approach,in which an O-scavenging metal layer and a barrier layer preventing scavenged metal diffusing into the high-k gate dielectric are used to engineer the thickness of the IL,is reported. Using a Ti scavenging layer and TiN barrier layer on a HfO_2 dielectric,the effective removal of the IL and almost no Ti diffusing into the HfO_2 have been confirmed by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy.High permittivity materials have been required to replace traditional SiO_2 as the gate dielectric to extend Moore＇s law.However,growth of a thin SiO_2-like interfacial layer（IL） is almost unavoidable during the deposition or subsequent high temperature annealing.This limits the scaling benefits of incorporating high-k dielectrics into transistors.In this work,a promising approach,in which an O-scavenging metal layer and a barrier layer preventing scavenged metal diffusing into the high-k gate dielectric are used to engineer the thickness of the IL,is reported. Using a Ti scavenging layer and TiN barrier layer on a HfO_2 dielectric,the effective removal of the IL and almost no Ti diffusing into the HfO_2 have been confirmed by high resolution transmission electron microscopy and X-ray photoelectron spectroscopy.

关 键 词：scavenging technology： EOT barrier layer TEM XPS 

分 类 号：TN386[电子电信—物理电子学]