Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation  

作　　者：韩锴 马雪丽 杨红 王文武 

机构地区：[1]Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2013年第7期175-178,共4页半导体学报（英文版）

基　　金：Project supported by the Important National Science & Technology Specific Projects of China(No.2009ZX02035);the National Natural Science Foundation of China(Nos.61176091,50932001)

摘　　要：The effect of Al incorporation on the effective work function（EWF） of TiN metal gate was systematically investigated.Metal-oxide-semiconductor（MOS） capacitors with W/TiN/Al/TiN gate stacks were used to fulfill this purpose.Different thickness ratios of Al to TiN and different post metal annealing（PMA） conditions were employed.Significant shift of work function towards to Si conduction band was observed,which was suitable for NMOS and the magnitude of shift depends on the processing conditions.The effect of Al incorporation on the effective work function（EWF） of TiN metal gate was systematically investigated.Metal-oxide-semiconductor（MOS） capacitors with W/TiN/Al/TiN gate stacks were used to fulfill this purpose.Different thickness ratios of Al to TiN and different post metal annealing（PMA） conditions were employed.Significant shift of work function towards to Si conduction band was observed,which was suitable for NMOS and the magnitude of shift depends on the processing conditions.

关 键 词：work function modulation AL MOS capacitor PMA 

分 类 号：TN386.1[电子电信—物理电子学]