0.5μm GaAs pHEMT射频矩阵开关  

A 0.5 μm GaAs pHEMT RF Matrix Switch MMIC

作　　者：汪洋[1] 杨洪文[2] 张海鹏[1] 阎跃鹏[2] 刘宇辙[2] 

机构地区：[1]杭州电子科技大学,杭州310018 [2]中国科学院微电子研究所,北京100029

出　　处：《微电子学》2013年第3期329-332,336,共5页Microelectronics

摘　　要：基于0.5μm GaAs pHEMT工艺,设计了一种应用于950～2 150MHz的4×2射频矩阵开关。该矩阵开关有四路输入两路输出,通过控制片内集成的4比特数字逻辑解码器电路,两路输出端口可以任意选择4路输入射频信号中的任意两路信号,或者同时选通一路信号,并在输出端集成负载检测功能。开关的工作电压为5V,在950～2 150MHz的频率范围内,其插入损耗低于5.6dB,隔离度高于37dB,每个输入和输出端口的回波损耗大于13dB,功率容量为19.4dBm,开关的最大功耗为8mW,适合多模多频段射频前端的应用。A 4×2 RF matrix switch for RF multiplexing application from 950 MHz to 2 150 MHz was designed based on 0.5 μm GaAs pHEMT.The matrix switch had four inputs and two outputs.A positive voltage controlled 4-bit decoder was integrated onto the switch.Both switch outputs could independently select any of the four inputs or simultaneously select the same input.And the matrix switch integrated load detection on the two output terminals.Operating at 5 V supply voltage,the switch had an insertion loss less than 5.6 dB,an isolation over 37 dB,a return loss above 13 dB for each input/output terminal,and a power capacity of 19.4 dBm,in the frequency range from 950 MHz to 2 150 MHz.With a maximum power consumption of 8 mW,this matrix switch is applicable for multi-mode and multi-band RF front end.

关 键 词：射频矩阵开关 逻辑解码器 插入损耗 

分 类 号：TN454[电子电信—微电子学与固体电子学]