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机构地区:[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]中国人民解放军空军驻重庆地区军事代表室,重庆400060
出 处:《微电子学》2013年第3期359-363,368,共6页Microelectronics
摘 要:设计了一种新颖的LDO线性稳压器。该LDO工作于负电源,具有微功耗、自身固定-5V输出、外接反馈电阻可实现可调输出等特点。基于0.6μm SOI CMOS工艺进行流片。测试结果表明,该电路输入电源电压VIN为-2~-18V,可调输出电压为-1.3V~VIN+0.5V@IOUT=15mA。该LDO功耗低,室温下空载静态电流约4.8μA,并且几乎不随VIN变化。内部带隙电压基准采用β二阶补偿,结构简单,温度系数为1.28×10-5/℃。线性调整率为0.015%,负载调整率为0.85Ω。A novel low-dropout(LDO) linear regulator was designed,which operated at negative power supply.The novel LDO featured ultra-low power,a fixed-5 V output,or adjustable output realized with external feedback resistors.The circuit was designed and implemented using 0.6 μm SOI CMOS process.Test results showed that the LDO had an input voltage from-2 V to-18 V and an output voltage adjustable from-1.3 V to VIN +0.5 V at an output current of 15 mA.The LDO had a quiescent current of about 4.8 μA at room temperature,which was almost unchanged with input voltage.The built-in bandgap voltage reference source with 2nd-order compensated β had a temperature coefficient of 1.28 × 10-5/℃.Typical line and load regulations of the LDO were 0.015 % and 0.85 Ω,respectively.
分 类 号:TN432[电子电信—微电子学与固体电子学]
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