Directly extracting both threshold voltage and series resistance from the conductance-voltage curve of an AlGaN/GaN Schottky diode  

作　　者：吕元杰 冯志红 顾国栋 敦少博 尹甲运 韩婷婷 盛百城 蔡树军 刘波 林兆军 

机构地区：[1]Science and Technology on Application Specific Integrated Circuit (ASIC) Laboratory,Hebei Semiconductor Research Institute [2]School of Physics,Shandong University

出　　处：《Chinese Physics B》2013年第7期426-429,共4页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Grant Nos.60890192,60876009,and 11174182);the Foundation of Key Laboratory,China

摘　　要：An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted from the conductance-voltage （G-V） curve and found to be in good agreement with the ones obtained by using the capacitance-voltage （C-V） curve integration and the plot of dV/d（ln I） versus current I. Thus, a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance-voltage curve for the AlGaN/GaN Schottky diode is developed.An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted from the conductance-voltage （G-V） curve and found to be in good agreement with the ones obtained by using the capacitance-voltage （C-V） curve integration and the plot of dV/d（ln I） versus current I. Thus, a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance-voltage curve for the AlGaN/GaN Schottky diode is developed.

关 键 词：AlGaN/GaN heterostructure Schottky diode threshold voltage series resistance 

分 类 号：TN311.7[电子电信—物理电子学] TN304.23