Lead zirconate titanate behaviors in an LDMOS  

作　　者：翟亚红 李威 李平 李俊宏 胡滨 霍伟荣 范雪 王刚 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Chinese Physics B》2013年第7期578-581,共4页中国物理B（英文版）

基　　金：the National Basic Research Program of China(Grant No.50772019);the National Natural Science Foundation of China(Grant No.61204084)

摘　　要：The behaviors of lead zirconate titanate （PZT） deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current–gate voltage （ID-VG） memory window of about 2.2 V is obtained at the sweep voltages of ±10 V for the 350-V laterally diffused metal oxide semiconductor （LDMOS）. The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.The behaviors of lead zirconate titanate （PZT） deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current–gate voltage （ID-VG） memory window of about 2.2 V is obtained at the sweep voltages of ±10 V for the 350-V laterally diffused metal oxide semiconductor （LDMOS）. The retention time of about 270 s is recorded for the LDMOS through a controlled ID-VG measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.

关 键 词：laterally diffused metal oxide semiconductor （LDMOS） lead zirconate titanate memory behavior RETENTION 

分 类 号：TN386[电子电信—物理电子学]