ZnO/ZnCdO和ZnO/ZnMgO超晶格的子带研究  

Research on intersubband of ZnO/ZnCdO and ZnO/ZnMgO superlattice

作　　者：雷红文[1,2] 张红[2] 王雪敏[1] 赵妍[1] 阎大伟[1] 沈昌乐[1] 吴卫东[1] 

机构地区：[1]中国工程物理研究院激光聚变研究中心,四川绵阳621999 [2]四川大学原子与分子物理研究所,四川成都610015

出　　处：《太赫兹科学与电子信息学报》2013年第3期480-483,共4页Journal of Terahertz Science and Electronic Information Technology

基　　金：极端条件物质特性联合实验室基金资助项目(12zxjk06)

摘　　要：ZnO是具有3.37 eV的宽禁带半导体材料,近年来引起了众多研究者的兴趣。Zn1-xCdxO和Zn1-xMgxO很好地实现了对ZnO能带的减小和增大。采用较为简单的一维K P势模型结合有效质量理论得到了ZnO/Zn1-xCdxO及ZnO/Zn1-xMgxO多量子阱的能量色散关系,以及子带的MeV跃迁与超晶格带阶、阱垒宽度之间的关系。将该多量子阱应用于太赫兹量子级联激光器(THz QCL)有源区,对粒子数反转和跃迁矩阵进行了相关讨论。ZnO has become more and more popular because of its wide bandgap of 3.37 eV. Zn1-xCdxO and Zn1-xMgxO have well realized the decreasement and increasement of ZnO bandgap. Using a simple 1-D K·P potential model combined with the effective mass theory, energy dispersion relation of multiple quantum wells and the relationship among intersubband transition, superlattice band offset and well/barrier width are obtained. Applying the multiple quantum well to the active area of Terahertz Quantum Cascade Laser（THz QCL）, the population inversion and transition matrix are discussed.

关 键 词：ZnCdO ZNMGO 量子级联激光器 粒子数反转 跃迁矩阵 

分 类 号：TN304[电子电信—物理电子学]