Ni_(50.3)Mn_(27.3)Ga_(22.4)磁性形状记忆合金薄膜的磁性能研究  

Research on Magnetic Propertied of Ni_(50.3)Mn_(27.3)Ga_(22.4) Magnetic Shape Memory Alloy Thin Film

作　　者：艾瑞波[1] 刘超[2] 孙祺[2] 牟海维[2] 

机构地区：[1]齐齐哈尔大学理学院,齐齐哈尔161006 [2]东北石油大学电子科学学院,大庆163318

出　　处：《科学技术与工程》2013年第18期5132-5134,5196,共4页Science Technology and Engineering

基　　金：国家自然科学基金资助项目(51101027);黑龙江省新世纪优秀人才支持计划;黑龙江省高校青年学术骨干支持项目(1251G004);黑龙江省教育厅科技项目(12511004)资助

摘　　要：采用磁控溅射方法制备Ni50.3Mn27.3Ga22.4磁性形状记忆合金薄膜。系统研究薄膜的马氏体相变行为、磁场增强相变应变特性以及温度对磁感生应变的影响。试验结果表明,经823 K退火1 h的Ni50.3Mn27.3Ga22.4薄膜室温下处于奥氏体态,马氏体相变开始温度为271.5 K。当沿膜面方向施加0—0.8 T磁场时,Ni50.3Mn27.3Ga22.4薄膜的马氏体相变应变量随磁场强度的增大而增大,呈现出磁场增强马氏体相变应变效应。试验还发现,饱和磁感生应变显著依赖于测试温度。当测试温度低于拟马氏体相变结束温度时,饱和磁感生应变随温度的升高先缓慢增大,在马氏体相变开始温度附近磁感生应变值发生跳跃式增加,然后随测试温度的进一步升高而降低。The Ni50.3Mn27.3Ga22.4 magnetic shape memory alloy thin film has been prepared by using magnetron sputtering method.The martensitic transformation behavior,magnetic-field enhancement strain and the effect of temperature on magneitc-field-induced strain have been systematically investigated.The results show that the Ni50.3Mn27.3Ga22.4 alloy thin film annealed at 823 K for 1 hour is at austenite phase state at room temperature,and the martensitic tansformation starting temperature is approximately 271.5 K.It is found that martensitic transformation strain increases with increasing external magnetic field along with the film plane when the field increases from 0 to 0.8 T,showing magnetic field enhancement effect to martensitic transformation strain.It is also found that the saturated magnetic-field-induced strains（MFIS） of Ni-Mn-Ga thin films remarkably depend on operation temperatures.The saturated MFIS of Ni50.3Mn27.3Ga22.4 thin films firstly increases and then decreases with increasing operation temperature below reverse martensitic transformation end temperature（Af） and the maximum saturated MFIS can be obtained around the martensitic transformation start temperature（Ms）.

关 键 词：NIMNGA 形状记忆合金 薄膜 马氏体相变 

分 类 号：TG111.92[金属学及工艺—物理冶金]