基于非晶丝GMI效应的微磁探测器  

Micro-magnetic Detector Based on the Giant Magnetoimpedance Effect of Amorphous Wire

作　　者：魏双成 邓甲昊 韩超 

机构地区：[1]机电动态控制重点实验室,北京100081

出　　处：《科学技术与工程》2013年第19期5431-5435,共5页Science Technology and Engineering

基　　金：国家自然科学基金(60874100)资助

摘　　要：非晶丝具有优良的软磁和近零磁滞特性,为设计出灵敏度高、输出线性范围宽的微磁探测器,通过分析非晶丝巨磁阻抗(Giant Magneto Impedance,GMI)效应影响因素和存在的问题,设计了特殊结构的磁敏感元件,解决了带负反馈电路传感器电路复杂和双线圈绕制困难的问题。同时设计了高频脉冲电流发生器、信号预处理电路和数字信号处理模块,共同构成微磁探测器。对传感器和探测器分别进行了实验。结果证明:该传感器在±3Oe磁场范围内具有良好的线性,传感器磁场灵敏度可达65mV/Oe,并具有良好的温度稳定性;探测器的磁场分辨率为50μOe,能够灵敏探测微小铁磁物体。Amorphous wire has perfect characteristics such as soft magnetic and nearly zero magnetostriction. In order to design low magnetic detector with high sensitivity and wide linear range, the giant magneto-impedance （GMI） effect of amorphous wire and its affecting factors were analyized. Magnetic impedance element was designed with a special structure. So the difficulties of complex negative feedback circuit and winding double circuit on amor- phous wire were solved. High frequency current pulse generator, signal pre processing circuit and digital signal pro- cessing module were designed. Thus a micro-magnetic detector was realized. The sensor and the detector were tested in laboratory. The test results prove that： the sensor has good linearity at the magnetic field range from -30e to ＋ 30e. The sensor sensitivity reaches to 65 mV/Oe and has well temperature stability. The detector magnetic field resolution can reach 50μOe, and micro magnetic objects can be detected.

关 键 词：非晶丝 GMI效应 磁敏感元件 磁探测器 

分 类 号：O482.54[一般工业技术—材料科学与工程]