Zn_(1-x)Mg_xO用于CIGS太阳电池的研究进展  

Developments of CIGS Solar Cells with Zn_(1-x)Mg_xO Films

作　　者：江秋怡[1] 王卿璞[1] 王汉斌[1] 王丹丹[1] 武丽伟[1] 李福杰[1] 

机构地区：[1]山东大学物理学院,济南250100

出　　处：《半导体光电》2013年第3期355-360,共6页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(51042006);山东省科技攻关项目(2009GG10007009);国家基础科学人才培养基金项目(J0730318)

摘　　要：Zn1-xMgxO透过率高、带隙可调,且与CIGS太阳电池在晶格和能带结构上匹配良好,可用作CIGS太阳电池缓冲层、窗口层,因此制备高质量的Zn1-xMgxO薄膜是提高太阳电池性能的关键。文章介绍了Zn1-xMgxO薄膜的结构特性、光学特性及制备方法;从Mg含量、Zn1-xMgxO膜厚及Zn1-xMgxO/CIGS界面处缺陷密度等方面概述了Zn1-xMgxO用于CIGS太阳电池的研究进展,并比较了Zn1-xMgxO与In2S3,ZnS,CdS等其他材料作缓冲层的CIGS太阳电池性能的差别。With high transparency,adjustable band gap and good match with CIGS in lattice and energy band structure,Zn1-xMgxO is regarded as the suitable material for the buffer layer and window layer of CIGS solar cells,so the fabrication of high quality Zn1-xMgxO films becomes to be the key problem for improving the efficiency of CIGS solar cells.In this paper,the preparation methods and structural and optical characteristics of Zn1-xMgxO films are introduced;and also the effects of concentration of Mg,the film thickness and the defect density on solar cells are summarized.As well it is compared the performance of solar cells with Zn1-xMgxO buffer layer with those applying other buffer layer materials.

关 键 词：Zn1-xMgxO 太阳电池 CIGS 缓冲层 

分 类 号：TN914.4[电子电信—通信与信息系统]