一种渐变掺杂型pin光探测器的高速响应性能研究  

Characteristic Analysis on High Frequency Response for Graded-doping pin Photodetector

作　　者：何文君[1] 黄永清[1] 段晓峰[1] 范鑫烨[1] 骆杨[1] 

机构地区：[1]北京邮电大学,北京100876

出　　处：《半导体光电》2013年第3期413-416,共4页Semiconductor Optoelectronics

基　　金：国家"973"计划资助项目(2010CB327600);国家自然科学基金重大国际(地区)合作研究项目(61020106007);国家自然科学基金面上项目(61274044);国家自然科学基金青年科学基金项目(61108048);国际科技合作项目(2011DFR11010);高等学校博士学科点专项科研基金--新教师类(20110005120018);中央高校基本科研业务费专项资金(2011RC0403)

摘　　要：高速光探测器是高速光纤通信系统和网络中的关键器件,它要求光探测器具有宽的频率响应带宽和高量子效率。垂直入光型pin光探测器的高速性能和量子效率均受到吸收层厚度的限制。为了改善其高速性能,采用InGaAsP材料作为吸收层以及限制层渐变掺杂的方法,对垂直入光型pin光探测器的高速响应性能进行了理论研究和仿真,结果表明,高速响应达到了40GHz。与不采用渐变掺杂浓度的同种结构光探测器相比,高速响应性能显著提高。As the key device for high bit rate optical fiber communication systems and optical networks,high speed photodetectors require wide frequency bandwidth and high quantum efficiency simultaneously.Vertically illuminated p-i-n photodetector suffers such a tradeoff as the frequency response and quantum efficiency are both limited by the thickness of the absorption layer.To improve its high-speed performance,InGaAsP is used as the absorbing material and the cladding layer is graded doped.In this paper,the high speed response performance of the vertically illuminated p-i-n photodetector is optimized by theoretical studies and simulation analysis,and its 3 dB bandwidth reaches 40 GHz.Compared to the photodetector without applying graded doping,the high speed performance is significantly improved.

关 键 词：光通信 pin型光探测器 渐变掺杂 频率响应 

分 类 号：TN247[电子电信—物理电子学]